 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| hexfet power mosfet gds gate drain source fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature benefits improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche soa enhanced body diode dv/dt and di/dt capability lead-free rohs compliant, halogen-free* applications brushed motor drive applications bldc motor drive applications battery powered circuits half-bridge and full-bridge topologies synchronous rectifier applications resonant mode power supplies or-ing and redundant power switches dc/dc and ac/dc converters dc/ac inverters to-220ab IRFB7430PBF 25 50 75 100 125 150 175 t c , case temperature (c) 0 100 200 300 400 500 i d , d r a i n c u r r e n t ( a ) limited by package s d g d v dss 40v r ds(on) typ. 1.0m max. 1.3m i d (silicon limited) 409a i d (package limited) 195a d s g 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 2.0 4.0 6.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 100a t j = 25c t j = 125c ordering information form quantity IRFB7430PBF to-220 tube 50 IRFB7430PBF ba se part numbe r pa ckage type sta ndard pack complete pa rt numb er !" downloaded from: http:/// " calculated continuous current based on maximum allowable junctiontemperature. bond wire current limit is 195a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. repetitive rating; pulse width limited by max. junctiontemperature. limited by t jmax , starting t j = 25c, l = 0.15mh r g = 50 , i as = 100a, v gs =10v. i sd 100a, di/dt 990a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . . limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 , i as = 54a, v gs =10v. halogen -free since april 30, 2014 absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw avalanche characteristics e as (thermally limited) single pulse avalanche energy mj e as (thermally limited) single pulse avalanche energy i ar avalanche current a e ar repetitive avalanche energy mj thermal resistance symbol parameter typ. max. units r jc junction-to-case CCC 0.40 r cs case-to-sink, flat greased surface 0.50 CCC r ja junction-to-ambient CCC 62 c/w a c 300 760 see fig. 14, 15, 22a, 22b 375 max. 409 289 1524 195 1452 -55 to + 175 20 2.5 10lbf in (1.1n m) static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.014 CCC v/c static drain-to-source on-resistance CCC 1.0 1.3 m CCC 1.2 CCC v gs = 6.0v, i d = 50a v gs(th) gate threshold voltage 2.2 CCC 3.9 v i dss drain-to-source leakage current CCC CCC 1.0 a CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 r g internal gate resistance CCC 2.1 CCC r ds(on) conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v ds = v gs , i d = 250 a v gs = 10v, i d = 100a v gs = 20v v gs = -20v v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c downloaded from: http:/// " # s d g dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 150 CCC CCC s q g total gate charge CCC 300 460 nc q gs gate-to-source charge CCC 77 CCC q gd gate-to-drain ("miller") charge CCC 98 CCC q sync total gate charge sync. (q g - q gd ) CCC 202 CCC t d(on) turn-on delay time CCC 32 CCC ns t r rise time CCC 105 CCC t d(off) turn-off delay time CCC 160 CCC t f fall time CCC 100 CCC c iss input capacitance CCC 14240 CCC pf c oss output capacitance CCC 2130 CCC c rss reverse transfer capacitance CCC 1460 CCC c oss eff. (er) effective output capacitance (energy related) CCC 2605 CCC c oss eff. (tr) effective output capacitance (time related) CCC 2920 CCC diode characteristics symbol parameter min. typ. max. units i s continuous source current CCC CCC 394 a (body diode) i sm pulsed source current CCC CCC 1576 a (body diode) v sd diode forward voltage CCC 0.86 1.2 v dv/dt peak diode recovery CCC 2.7 CCC v/ns t rr reverse recovery time CCC 52 CCC ns t j = 25c v r = 34v, C C C5 2C C C t j = 125c i f = 100a q rr reverse recovery charge CCC 97 CCC nc t j = 25c di/dt = 100a/ s C C C9 7C C C t j = 125c i rrm reverse recovery current CCC 2.3 CCC a t j = 25c r g = 2.7 v gs = 10v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0 mhz v ds =20v i d = 100a showing the i d = 30a v dd = 20v t j = 175c, i s = 100a, v ds = 40v conditions v ds = 10v, i d = 100a t j = 25c, i s = 100a, v gs = 0v integral reverse p-n junction diode. mosfet symbol v gs = 0v, v ds = 0v to 32v v gs = 0v, v ds = 0v to 32v downloaded from: http:/// " $ fig 3. typical output characteristics fig 5. typical transfer characteristics fig 6. normalized on-resistance vs. temperature fig 4. typical output characteristics fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 4.8v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 4.8v bottom 4.5v 0 50 100 150 200 250 300 350 400 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 100a downloaded from: http:/// " fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 41 42 43 44 45 46 47 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 13. typical on-resistance vs. drain current 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc limited by package 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 e n e r g y ( j ) v ds = 0v to 32v 0 200 400 600 800 1000 1200 i d , drain current (a) 0.0 2.0 4.0 6.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v downloaded from: http:/// " % fig 14. maximum effective transient thermal impedance, junction-to-case fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far inexcess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b.4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15).t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) downloaded from: http:/// " & ' ( ) * + * , fig 17. threshold voltage vs. temperature ' ( ) + - * , ' ( ) * + * , ' ( ) + - * , -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/ s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 60 100 140 180 220 260 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 50 100 150 200 250 300 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c downloaded from: http:/// " . fig 23a. switching time test circuit fig 23b. switching time waveforms fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 22. / * *, ( + for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 0 ! "#! $ %&$'('& 0 + - + + + - - - ! ? ! ? " #$## ? % & & ? #$##' $ d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90%10% v gs t d(on) t r t d(off) t f ! ( ) 1 * % 0.1 % ! ( ) ! + - ! ! downloaded from: http:/// " ! to-220ab packages are not recommended for surface mount application. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// " 1 2 3 4 )4,, ,) ' , , 11 5)) * 677+ ) ! " #$%& '( ) * +" ,-- " - . - qualification level moisture sensitivity level to-220 not applicable rohs compliant (per jedec jesd47f ?? guidelines) yes qualification information ? industrial revision history date comment ? updated data sheet with new ir corporate template. ? updated package outline and part marking on page 9. ? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. ? updated e as (l =1mh) = 1452mj on page 2 ? updated note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 , i as = 54a, v gs =10v. on page 2 4/22/2014 2/19/2015 downloaded from: http:/// |
Price & Availability of IRFB7430PBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |